Porous Graphite for Third-Generation Semiconductor SiC

Why is silicon carbide (SiC) considered the most important material in third-generation semiconductors?

In semiconductor technology, the highest purity fine-grained graphite is required, and the growth of SiC single crystals typically involves a certain physical vapor transport mechanism at extremely high temperatures exceeding 2400°C.

Porous graphite serves as a critical material during the crystal growth process, while also demanding the highest purity and absolute precision. Our company can customize according to customers' different model requirements to meet their diverse needs.