High-power IGBT static parameter tester

The Huake Zhiyuan Static Parameter Tester can be used for testing IGBTs in various package forms, and can also measure the V-I characteristics of high-power diodes, IGBT modules, high-power IGBTs, high-power bipolar transistors, MOSFETs, and other devices. It tests various power devices up to 1200A (expandable to 2000A) and 5000V, widely applied in rail transportation, electric vehicles, wind power generation, inverters, and the welding machine industry for IGBT incoming inspection selection and failure analysis. The equipment can also be used for online maintenance in industries such as inverters, wind power, rail transportation, and welding machines, without the need to remove components from the circuit board for separate testing, enabling online IGBT detection. Testing is convenient and the process is simple; parameters can be set directly in the test host for immediate testing, or automatic testing can be performed after programming the host via software control. Static parameter testing of IGBTs is completed through computer operation;

Product Information:

1. Product Model and Name: IGBT Static Parameter Tester

2. Product test current and voltage: 3000A, ±5000V, downward compatible

3. VGE can reach up to ±100V; Turn-on voltage VGETH supports two testing methods;

4. Adopts a slot-type design structure for easy upgrade and maintenance;

5. The equipment supports testing of Si-based and SiC material MOSFETs, IGBT discrete devices and modules, diode testing, and thyristor testing,

6. Automatically performs binning tests, covering both the testing range under high-power characteristics and ensuring testing accuracy for low-power devices

7. Supports single-point testing, I-V curve scanning, and also has curve comparison function;

8. Test data can be stored as Excel files, WORD reports

9. Safety features: multiple protection measures including explosion-proof, electric shock prevention, scald prevention, short-circuit protection, etc., ensuring the safety of operators, equipment, data, and samples.

Test Parameters:

ICES  Collector-Emitter Leakage Current

IGESF Forward Gate Leakage Current

IGESR Reverse Gate Leakage Current

BVCES Collector-Emitter Breakdown Voltage

VGETH Gate-Emitter Threshold Voltage

VCESAT Collector-Emitter Saturation Voltage

ICON On-state Electrode Current

VGEON On-state Gate Voltage

VF Diode Forward Voltage Drop

The entire testing process is automated. The computer software includes a database management and query function, and can generate test curves for easy operation and use.

Basic Capabilities:

1) Test voltage range: 0-±5000V

2) Test current range: 0-±1600A

3) Test gate voltage range: 0-±100V

4) Voltage resolution: 0.1mV

5) Current resolution: 0.1nA

Test Types and Parameters:

(1) Diode (supports Si, SiC, GaN material devices)

Static parameters: BVR/Breakdown Voltage, IR/Leakage Current, VF/Forward Voltage Drop;

(2) MOSFET (supports Si, SiC, GaN material devices)

Static parameters: BVDSS/Drain-Source Breakdown Voltage, VGS(th)/Gate Turn-on Voltage, IDSS Drain-Source Leakage Current, VF/Diode Forward Voltage Drop; Rdson Internal Resistance

(3) IGBT Discrete Devices and Modules (supports Si, SiC, GaN material devices)

Static parameters: BVCES/Collector-Emitter Breakdown Voltage, VGE(th)/Gate Turn-on Voltage, ICES/Collector-Emitter Leakage Current, VF/Diode Forward Voltage Drop; VCESAT/Saturation Voltage Drop, IGESR, IGESF Gate Leakage Current