ALD Atomic Layer Deposition Coating Machine

I. Equipment Overview:

The T-ALD Atomic Layer Deposition System is a multi-wafer deposition system specifically designed for research and industrial small-scale mass production users. The system is fully compliant with CE electrical standards and is widely used in microelectronics, nanomaterials, optical thin films, solar cells, and other fields.

II. Product Advantages:

Advanced software control system: The system integrates process recipes, parameter settings, permission settings, interlock alarms, status monitoring, and other functions.

III. Technical Specifications:

Substrate Size: 12 inches and below

Substrate Heating Temperature: Room temperature ~300°C

Number of Precursor Source Lines: Standard 3 precursor lines, customizable

Precursor Line Temperature: Room temperature ~200°C, control accuracy ±0.1°C

Source Bottle Heating Temperature: Room temperature ~200°C, control accuracy ±0.1°C

ALD Valve: Swagelok high-speed high-temperature ALD-specific valve

Base Vacuum: <5x10⁻³ Torr, imported corrosion-resistant pump

Carrier Gas System: N₂ or Ar

Deposition Mode: Continuous and dwell deposition modes, freely selectable

Control System: PLC + touch screen or display

Power Supply: 50-60Hz, 220V/20A AC power

Deposition Non-uniformity: Non-uniformity < ±1%

Equipment Dimensions: 600mm x 600mm x 1100mm

IV. Types of Depositable Thin Films:

Elements: Co, Cu, Ta, Ti, W, Ge, Pt, Ru, Ni, Fe…

Nitrides: TiN, SiN, AlN, TaN, ZrN, HfN, WN…

Oxides: TiO₂, HfO₂, SiO₂, ZnO, ZrO₂, Al₂O₃, La₂O₃, SnO₂…

Other Compounds: GaAs, AlP, InP, GaP, InAs, LaHfₓOᵧ, SrTiO₃, SrTaO₆…

V. ALD Application Examples:

Capacitive dielectric for memory, high aspect ratio diffusion barrier layers in copper interconnects, pinhole-free passivation layers for OLEDs, highly uniform coatings for MEMS, coatings for nanoporous structures, specialty fiber doping, solar cells, flat panel displays, optical thin films, and various other specialized nanostructured thin films.