IGBT Module 5SNG 0450R170300

In 1968, Hitachi developed ultra-high-speed logic hybrid large-scale integration technology, in 1966 it developed processing technology for silicon transistor LTP, and in 1978 it significantly advanced semiconductor manufacturing and sales, later becoming one of the world's top ten power semiconductor manufacturers.

In 2018, Hitachi reached a cooperation agreement with ABB, planning to acquire 80.1% of ABB's power grid business for $11 billion. The acquisition was completed in 2020, with Hitachi and ABB's power grid business forming a joint venture. The completed semiconductor business was placed under Hitachi ABB Power Grids Ltd. – Semiconductor Division, with products applied in fields requiring high reliability such as locomotive traction, industrial and energy transmission. The new Hitachi Energy inherits the combined 250-year history of both Hitachi and ABB. The company operates in over 90 countries, employs approximately 36,000 people, and is headquartered in Switzerland.

The integrated product series includes Gate Turn-Off Thyristors (GTO), Insulated Gate Bipolar Transistors (IGBT), Integrated Gate-Commutated Thyristors (IGCT), Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFET), Thyristors (SCR), and diodes, among others. These products demonstrate outstanding performance across various applications with rated currents from 150 to 12,000 amperes and rated voltages from 200 to 8,500 volts.